Ligand Functionality-Dependent Performance of Organotin Carboxylate Resists.

Area of Science:

• Materials Science
• Chemistry
• Nanotechnology

Background:

• Metal-containing resists are crucial for high-resolution lithography.
• Understanding photochemical mechanisms, especially ligand effects, is vital for resist development.

Purpose of the Study:

• To design and synthesize novel organotin carboxylates as deep-ultraviolet (DUV) resists.
• To investigate the relationship between ligand functionality and photochemical mechanisms in DUV lithography.
• To evaluate the lithographic performance and etch durability of the developed resists.

Main Methods:

• Synthesis of a controlled pair of organotin carboxylates with varying functional groups.
• Lithographic evaluation including resolution testing (90 nm half-pitch) and pattern transfer on hard-mask layers.
• Spectroscopic and chemical characterization to elucidate photochemical reaction pathways.

Main Results:

• Both synthesized organotin carboxylate resists achieved 90 nm half-pitch resolution.
• Successful pattern transfer onto carbon-based hard-mask layers was demonstrated.
• Two competitive photochemical reaction paths involving olefin groups were proposed, influencing lithographic sensitivity and dissolution contrast.

Conclusions:

• The structural tunability of organotin carboxylates allows for control over photochemical mechanisms.
• These materials show promise as high-resolution and etch-durable DUV resists.
• Ligand design is a key factor in optimizing resist performance for advanced lithography.