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Updated: Jan 29, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Study on the Core-Shell Structure of Gas-Assisted Coaxial Electrospinning Fibers: Implications for Semiconductor
Rongguang Zhang1,2, Xuanzhi Zhang1,2, Jianfeng Sun1,2
1State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, China.
Abstract:
Gas-assisted coaxial electrospinning (GACES), a simple and versatile technique for the large-scale fabrication of coaxial nanofiber membranes, possesses significant industrial potential across advanced manufacturing sectors including semiconductors-particularly for fabricating high-precision dielectric layers, high-uniformity encapsulation materials, and flexible semiconductor substrates requiring tailored core-shell architectures. However, there is still a lack of relevant studies on the effective regulation of the core-shell structures of coaxial fibers based on GACES, which greatly limits the batch preparation and wide application of coaxial fibers. Finite element simulation analysis of the flow field and development of the coaxial jet mechanics model with a gas-driven flow field-two key methodologies in this study-successfully uncovered the influence mechanism of gas-assisted flow fields on the core-shell structures of coaxial nanofibers. By adjusting the gas-assisted flow fields parameters, we reduced the total diameter of coaxial fibers by 47.33% (average fiber diameter: 334.12 ± 16.29 nm → 175.98 ± 1.18 nm), decreased the shell thickness by 72.98%, increased the core-shell ratio by 289% (core-shell ratio: 0.49 → 1.91), and improved the uniformity of the total diameter distribution of coaxial fibers by 30.64%. This study delivers a practical conceptual framework and robust experimental underpinnings for the scalable fabrication of coaxial nanofiber membranes with controllable core-shell structures, thereby promoting their practical application in semiconductor devices such as ultra-thin dielectric layers, precisely structured encapsulation materials, and high-uniformity templates for nanoscale circuit patterning.
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