A Detection Method for Seeding Temperature in Czochralski Silicon Crystal Growth Based on Multi-Sensor Data Fusion

Lei Jiang1,2, Tongda Chang2, Ding Liu1,2

  • 1School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China.

PubMed
Summary

This study introduces a novel method for assessing silicon crystal seeding temperature by analyzing seeding duration. The developed multimodal fusion network accurately quantifies temperature, improving crystal quality and yield in semiconductor manufacturing.

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