Dry-Transferred MoS2 Films on PET with Plasma Patterning for Full-Bridge Strain-Gauge Sensors
Jinkyeong Kim1, Minjae Lee1, Wooseung Lee1
1The Department of Nanomechatronics Engineering, Pusan National University, Busandaehak-ro 63 beon-gil 2, Geumjeong-gu, Busan 46241, Republic of Korea.
None:
In this study, a high-performance MoS2-based strain-gauge pressure was sensor fabricated entirely below 80 °C, enabling direct integration onto flexible polyethylene terephthalate (PET) substrates. The sensor comprised a three-layer MoS2 channel (~2 nm) patterned via dry transfer and O2/Ar plasma etching, interfaced with Cr/Au electrodes. This wafer-scale and cost-effective fabrication route preserves the crystallinity of the film and prevents substrate degradation. The sensor achieved a gauge factor of ~104 under compression, representing a fifty-fold improvement over conventional metal foil gauges (~2), with a linear response across both compressive and tensile regimes. Mechanical robustness was confirmed through repeated bending and tape adhesion tests, with no degradation in electrical performance. When configured as a Wheatstone bridge, this device exhibits normalized sensitivity suitable for real-time monitoring, with response and recovery times below 200 ms. These results establish O2/Ar-plasma-patterned MoS2 architectures as a scalable, cost-effective platform for next-generation flexible sensors, outperforming metal-foil technology in applications including seat-occupancy detection, wearable physiological monitoring, and tactile interfaces for soft robotics.
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