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High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing
Gaokuo Zhong1,2, Jiaqi Yan2,3, Mingkai Tang2,3
1Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 430100, China.
National Science Review
|January 29, 2026
Summary
Researchers developed a novel strategy for designing ferroelectric synapses that can be controlled by both light and electricity. This breakthrough enables intelligent sensor-memory-computing systems with high accuracy and efficiency.
Area of Science:
- Materials Science
- Neuroscience Engineering
- Device Physics
Background:
- Ferroelectric materials offer nonvolatile properties ideal for artificial synapses in intelligent sensor-memory-computing (SMC) systems.
- Simultaneous optical and electrical modulation of ferroelectric synapses presents a significant design challenge.
Purpose of the Study:
- To develop a high-throughput strategy for designing optoelectronic co-modulated ferroelectric synapses.
- To create an artificial SMC system capable of simultaneous sensing and image recognition.
Main Methods:
- Designed a ferroelectric field-effect transistor (FeFET) using a Pb(Zr0.2Ti0.8)O3/InGaZnO (IGZO) heterostructure.
- Employed high-throughput screening to identify IGZO materials for dual optical and electrical modulation.
- Screened FeFETs for optoelectronic co-modulated synaptic functionalities.
Main Results:
- Constructed an artificial SMC system using the developed ferroelectric synapses.
- Achieved a high image recognition accuracy of 88.42% in the SMC system.
- Demonstrated reduced hardware overheads, fast speed, and low power consumption in the SMC system.
Conclusions:
- Introduced a novel materials-to-device strategy for multifunctional artificial synapses.
- The developed optoelectronic co-modulated ferroelectric synapses represent a new paradigm for high-performance SMC systems.
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