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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
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Quasi-Dual-Channel Oxide Transistors With Enhanced Stability and Performance
Sheng-Xin Lin1,2, Yu-Yu Hong1,2, Jun-He Shen1,2
1Micro&Nano Semiconductor Research Center of Jimei University, School of Ocean Information Engineering, Jimei University, Xiamen, China.
Small (Weinheim an Der Bergstrasse, Germany)
|January 30, 2026
Summary
This study introduces a quasi-dual channel strategy for metal oxide thin-film transistors (MO TFTs). This approach enhances device stability and mobility by precisely controlling oxygen content, improving process tolerance.
Area of Science:
- Materials Science
- Electronics Engineering
- Semiconductor Physics
Background:
- Metal oxide thin-film transistors (MO TFTs) offer high electron mobility and optical transparency for advanced displays.
- Device stability in MO TFTs is critically dependent on oxygen content, impacting both positive bias stress (PBS) and negative bias stress (NBS) stability.
- Precise oxygen control is challenging, limiting the processing window for MO TFT fabrication.
Purpose of the Study:
- To develop a novel strategy for enhancing the stability and performance of MO TFTs.
- To overcome the limitations associated with precise oxygen content control in MO TFTs.
- To improve the process tolerance of oxide TFTs for broader applications.
Main Methods:
- Implementation of a quasi-dual channel design.
- Utilizing an oxygen-rich tantalum-doped tin oxide (TTO) channel layer.
- Employing a HfOx insulator layer with an oxygen-deficient surface.
Main Results:
- Significantly reduced threshold voltage shifts under PBS (from 8.82 V to 0.09 V) and NBS (from -1.07 V to -0.11 V) compared to conventional TTO/SiO2 TFTs.
- Achieved a 4.4-fold enhancement in electron mobility.
- Demonstrated improved device stability and process tolerance.
Conclusions:
- The quasi-dual channel strategy effectively addresses the oxygen content sensitivity in MO TFTs.
- This design offers a promising approach for fabricating highly stable and high-performance oxide TFTs.
- The proposed method enhances process tolerance, paving the way for general applications in oxide TFT technology.
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