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Bond Energies and Bond Lengths02:49

Bond Energies and Bond Lengths

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Stable molecules exist because covalent bonds hold the atoms together. The strength of a covalent bond is measured by the energy required to break it, that is, the energy necessary to separate the bonded atoms. Separating any pair of bonded atoms requires energy — the stronger a bond, the greater the energy required to break it.
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A peptide bond covalently attaches amino acids through a dehydration reaction. One amino acid's carboxyl group and another amino acid's amino group combine, releasing a water molecule. The resulting bond is the peptide bond. The products that such linkages form are peptides. As more amino acids join this growing chain, the resulting chain is a polypeptide. Each polypeptide has a free amino group at one end. This end has the N-terminal, or the amino-terminal, and the other end has a free...
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When atoms gain or lose electrons to achieve a more stable electron configuration they form ions. Ionic bonds are electrostatic attractions between ions with opposite charges. Ionic compounds are rigid and brittle when solid and may dissociate into their constituent ions in water. Covalent compounds, by contrast, remain intact unless a chemical reaction breaks them.
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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
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Wafer-Bonded AlGaInP Red LEDs with Suppressed S-Droop through Surface Sulfidation.

Je-Sung Lee1, Seung-Hyun Mun1, Sunwoo Shin1

  • 1Department of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.

ACS Applied Materials & Interfaces
|January 30, 2026
PubMed
Summary

Surface sulfidation using ammonium sulfide significantly boosts micro-light-emitting diode (micro-LED) efficiency by repairing sidewall damage. This method enhances external quantum efficiency (EQE) and reduces efficiency droop in small pixels.

Keywords:
AlGaInPLEDoSS-droopammonium sulfidemicro LEDpassivationred LEDsize-effect

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Area of Science:

  • Semiconductor device physics
  • Materials science
  • Optoelectronics

Background:

  • Micro-light-emitting diode (micro-LED) displays require high pixel density, achieved through miniaturized LED structures.
  • Smaller micro-LEDs suffer efficiency loss (size-effect or S-droop) due to surface defects from etching, increasing nonradiative recombination and leakage.
  • Chemical passivation, like ammonium sulfide treatment, is used for aluminum gallium indium phosphide (AlGaInP) LEDs, but its mechanism and broad effects are not fully understood.

Purpose of the Study:

  • To investigate the broader effects of ammonium sulfide surface sulfidation on wafer-bonded vertical AlGaInP LEDs for light-emitting diode on silicon (LEDoS) integration.
  • To elucidate the chemical mechanisms behind ammonium sulfide passivation and its impact on surface defects and electrical properties.
  • To quantify the efficiency improvements and S-droop reduction in micro-LEDs treated with ammonium sulfide.

Main Methods:

  • Fabrication of wafer-bonded vertical AlGaInP LED structures compatible with LEDoS.
  • Application of ammonium sulfide surface sulfidation.
  • Chemical analysis using energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS).
  • Electrical characterization to separate parallel and series resistances.

Main Results:

  • Surface sulfidation replaced defects with stable sulfur bridge bonds, unpinning the Fermi level.
  • Analysis revealed the influence of sulfidation on both top and sidewall interfaces.
  • Maximum external quantum efficiency (EQE) increased by 120.6% at 5 A/cm² for a 10 μm pixel.
  • Significant reduction in S-droop was observed.

Conclusions:

  • Ammonium sulfide surface sulfidation is an effective method to mitigate surface defects and improve efficiency in AlGaInP micro-LEDs.
  • The study clarifies the passivation mechanism, involving sulfur bridge bond formation and Fermi level unpinning.
  • This technique offers a pathway to enhance micro-LED performance for advanced display applications, including LEDoS.