High-bandwidth 1060nm VCSEL design with hybrid buried tunnel junction and oxide confinement

1060nm vertical-cavity surface-emitting lasers (VCSELs) offer low dispersion and transmission loss for optical interconnects, but conventional oxide-confined designs face challenges in thermal accumulation and parasitic effects. We propose a high-speed 1060nm VCSEL featuring a hybrid confinement structure that integrates a buried tunnel junction (BTJ) with an oxide aperture, along with an optimized 8nm BTJ position offset. This hybrid architecture enhances current injection, reduces parasitic capacitance, and improves thermal management. The device achieves a -3dB modulation bandwidth of 37.2GHz, low differential resistance (~65 Ω), >50dB side-mode suppression ratio, and a >10K reduction in peak temperature via numerical modeling. These results demonstrate a promising approach for next-generation, energy-efficient VCSELs targeting high-speed, short-reach optical communication systems.