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Ferromagnetic Interface Engineering of Spin-Charge Conversion in RuO_{2}.

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This summary is machine-generated.

Altermagnets offer new spin-charge conversion pathways. Researchers demonstrated that the adjacent ferromagnet controls this conversion in ruthenium dioxide, enabling tailored spintronic devices.

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Area of Science:

  • Spintronics
  • Materials Science
  • Condensed Matter Physics

Background:

  • Spin-orbit torque efficiency is typically limited by bulk material properties.
  • D-wave altermagnets introduce a novel nonrelativistic spin-charge conversion mechanism.
  • The inverse spin-Hall effect is a known spin-charge conversion channel.

Purpose of the Study:

  • To investigate the role of adjacent ferromagnets in dictating spin-charge conversion in altermagnetic oxides.
  • To explore the interplay between bulk and interfacial effects in spin-charge conversion.
  • To establish ferromagnetic interfacing as a method for controlling spintronic device properties.

Main Methods:

  • Spin-pumping measurements on ruthenium dioxide (RuO2) bilayers with yttrium iron garnet (YIG) and nickel-iron (Py) ferromagnets.
  • Utilizing crystalline and polycrystalline RuO2.
  • Employing first-principles calculations to analyze electronic structure and hybridization.
  • Investigating the effect of an ultrathin gold (Au) spacer at the interface.

Main Results:

  • Opposite effective spin-Hall angles were observed for RuO2/YIG and RuO2/Py bilayers.
  • An inserted Au spacer at the RuO2/YIG interface reversed the spin-charge conversion signal.
  • The RuO2/YIG interface exhibited a dominant inverse Rashba-Edelstein effect, while RuO2/Py showed a bulk inverse spin-Hall effect.
  • First-principles calculations revealed interface-selective band hybridization, with Rashba surface states surviving at the YIG interface but being quenched by Py.

Conclusions:

  • Ferromagnetic interfacing provides a deterministic method to tailor spin-charge conversion in altermagnetic oxides.
  • The choice of adjacent ferromagnet significantly influences the dominant spin-charge conversion mechanism (bulk vs. interfacial).
  • This control paves the way for developing field-free, low-dissipation spintronic memory devices.