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Published on: November 17, 2023
Individual Single-Crystalline Irregular In2O3 Microcavity for Ultrasensitive Semiconductor-Based SERS Biosensor
Mengyang Zhang1,2, Jiayi Li1, Wei Cao3
1Collaborative Innovation Center of Biomedical Functional Materials of Jiangsu Province, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, China.
Researchers developed a new ultrasensitive semiconductor SERS sensor using irregular hexagonal prism Indium Oxide (I-In2O3) microcavities. This novel platform enhances light-matter interactions for precise molecular detection without relying on gap-enhanced fields.
Area of Science:
- Materials Science
- Spectroscopy
- Nanotechnology
Background:
- Surface-enhanced Raman spectroscopy (SERS) offers high sensitivity and water-interference-free detection.
- Developing single-particle semiconductor SERS substrates without gap-enhancement is a key challenge.
Purpose of the Study:
- To create an ultrasensitive semiconductor SERS system using a novel microcavity structure.
- To investigate the role of morphology and interfacial charge transfer in enhancing SERS performance.
Main Methods:
- Fabrication of highly crystalline irregular hexagonal prism Indium Oxide (I-In2O3) microcavities.
- Finite-difference time-domain simulations and photoluminescence spectroscopy to confirm microcavity formation.
- Aberration-corrected electron microscopy and density functional theory calculations to analyze material structure and electronic properties.
Main Results:
- Confirmed whispering-gallery-mode microcavity formation on the I-In2O3 platform, enhancing light confinement.
- Observed contracted lattice parameters and electronic band restructuring in I-In2O3 due to compressive lattice strain.
- Demonstrated quantitative and multiplexing capabilities for rapid antibiotic detection using the I-In2O3 SERS system.
Conclusions:
- The I-In2O3 microcavity platform enables ultrasensitive, single-particle SERS detection.
- Morphology-induced light accumulation and strain-improved charge transfer are crucial for enhanced SERS.
- This work provides a new approach for developing supersensitive semiconductor SERS sensors.
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