Photon and electron response of silicon-diode neutron detectors
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Updated: Aug 12, 2026
06:05
Using Neutron Spin Echo Resolved Grazing Incidence Scattering to Investigate Organic Solar Cell Materials
Published on: January 15, 2014
Medical Physics
|January 1, 1978
Abstract:
The photon response of silicon-diode neutron detectors is analyzed theoretically and measured in the 15-25-MeV region. The main mechanism for producing a response in the diode is shown to be the displacement of silicon atoms by scattering of electrons. If the photon source is an electron accelerator target, the response is mostly due to electrons originating in the target with a smaller contribution from electrons produced in the diode by photons generated at small angles to the beam.
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