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When analyzing a single line-to-ground fault from phase A to ground at a three-phase bus, it is important to consider the fault impedance. This impedance is zero for a bolted fault, equal to the arc impedance for an arcing fault, and represents the total fault impedance for a transmission-line insulator flashover. To derive sequence and phase currents, fault conditions are translated from the phase domain to the sequence domain.
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In an underdamped second-order system, where the damping ratio ζ is between 0 and 1, a unit-step input results in a transfer function that, when transformed using the inverse Laplace method, reveals the output response. The output exhibits a damped sinusoidal oscillation, and the difference between the input and output is termed the error signal. This error signal also demonstrates damped oscillatory behavior. Eventually, as the system reaches a steady state, the error diminishes to zero.
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First-order systems, such as RC circuits, are foundational in understanding dynamic systems due to their straightforward input-output relationship. Analyzing their responses to different input functions under zero initial conditions reveals significant insights into system behavior.
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Fault interruption scheme for HVDC systems using GaN-HEMT and VCB.

Ali Raza1, Muhammad Zeeshan Babar2, Muhammad Umair Shahid1

  • 1Department of Electrical Engineering, Khwaja Fareed University of Engineering and Information Technology, Rahim Yar Khan, Pakistan.

Journal of Power Electronics : the Official Publication of the Korean Institute of Power Electronics (KIPE)
|February 4, 2026
PubMed
Summary
This summary is machine-generated.

This study introduces a hybrid DC circuit breaker using GaN-HEMT switches for faster fault interruption in HVDC systems. The new design significantly improves fault-clearing times compared to SiC-MESFET based switches.

Keywords:
HEMTHybrid DC circuit breakerMESFETVacuum circuit breaker

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Area of Science:

  • Electrical Engineering
  • Power Systems Engineering
  • Materials Science

Background:

  • High-voltage direct current (HVDC) transmission requires reliable circuit breakers for fault interruption.
  • Wideband-gap semiconductor devices like SiC-MESFET and GaN-HEMT are crucial for advanced HVDC circuit breakers.
  • Hybrid DC circuit breakers (HDCCBs) combine mechanical and electronic switches for efficient fault management.

Purpose of the Study:

  • To propose and evaluate an advanced fault interruption scheme for HVDC systems using a novel hybrid DC circuit breaker.
  • To investigate the performance of Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) switches in comparison to Silicon Carbide Metal-Semiconductor Field-Effect Transistor (SiC-MESFET) switches for rapid fault current interruption.
  • To demonstrate the effectiveness of the proposed HDCCB design in reducing fault-clearing times.

Main Methods:

  • Development of a hybrid DC circuit breaker (HDCCB) integrating a vacuum circuit breaker (VCB) with fast-switching GaN-HEMT electronic switches.
  • Implementation of a system model in Simulink for comparative analysis of different protection topologies.
  • Utilizing artificial zero current crossing for current commutation to facilitate DC fault interruption.

Main Results:

  • The proposed HDCCB with GaN-HEMT switches achieved fault-clearing times of 2.2 ms (500 kV, 9 kA) and 2 ms (100 kV, 10 kA).
  • This represents a significant improvement of 52.38% and 50% in fault-clearing time compared to existing SiC-MESFET based mechanisms.
  • GaN-HEMT demonstrated superior reliability and faster switching performance than SiC-MESFET, as validated by simulation results.

Conclusions:

  • The advanced HDCCB design utilizing GaN-HEMT switches offers a highly effective solution for rapid fault interruption in HVDC systems.
  • GaN-HEMT technology provides a substantial performance advantage over SiC-MESFET for high-power electronic switching applications in HVDC.
  • The proposed scheme enhances the overall reliability and efficiency of HVDC transmission protection.