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Large-Scale Dual-Channel WSe2 Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and

Eunyeong Yang1, Jiwon Ma1, Changwook Lee1

  • 1Department of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea.

Nano Letters
|February 5, 2026
PubMed
Summary
This summary is machine-generated.

Reconfigurable field-effect transistors (RFETs) using WSe2 enable flexible circuit design. These dual n-/p-channel devices allow nonvolatile switching for advanced ternary memory and Boolean logic gates.

Keywords:
Charge-Trapping LayerReconfigurable Field-Effect TransistorsReconfigurable LogicTungsten DiselenideTwo-Dimensional Materials

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Reconfigurable field-effect transistors (RFETs) offer postfabrication device polarity switching for flexible circuit designs.
  • Monolayer transition metal dichalcogenides (TMDs) like WSe2 are promising for advanced electronic devices.
  • Achieving dual n-/p-channel operation and nonvolatile switching is crucial for versatile electronic applications.

Purpose of the Study:

  • To demonstrate large-scale dual n-/p-channel RFETs based on homogeneous monolayer WSe2.
  • To integrate a charge-trapping layer for nonvolatile polarity switching.
  • To explore the application of these RFETs in ternary content-addressable memory and Boolean logic gates.

Main Methods:

  • Fabrication of dual n-/p-channel RFETs using monolayer WSe2.
  • Integration of a charge-trapping layer and a multilayer gate dielectric stack (hBN/HfO2/Al2O3).
  • Selective doping to achieve ambipolar transport and nonvolatile switching between n- and p-type modes.

Main Results:

  • Demonstrated large-scale dual n-/p-channel RFETs with ambipolar transport.
  • Achieved complete nonvolatile switching between n- and p-type modes via charge-trapping.
  • Realized ternary content-addressable memory (2T per cell) and a full set of Boolean logic gates (AND, OR, NAND, NOR).

Conclusions:

  • Dual n-/p-channel WSe2 RFETs are scalable and functionally versatile.
  • These devices serve as effective building blocks for programmable logic and memory.
  • The demonstrated technology paves the way for future computing architectures.