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Updated: Feb 7, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Edge-Enriched Metal-Organic Framework Integrated with a Gate-Sensitive Field-Effect Transistor for Highly Sensitive
Jiaxin Liu1, Zhe Wang1, Chengxu Lin1
1State key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P.R. China.
Abstract:
Non-invasive monitoring of exhaled acetone-a recognized biomarker of diabetes-has offered a promising and convenient diagnostic approach for diabetes. However, conventional optical and metal oxide semiconductor sensors suffer from bulky instrumentation, high power consumption, and poor portability. Metal-organic framework (MOF)-based sensors can overcome these drawbacks but still require improvements in response time and stability. Here, we develop a gate-sensitive field-effect transistor (GS-FET) gas sensor functionalized with a sensitive MOF for ultrafast and noninvasive acetone detection. The MOF serves as a chemical-sensitive gate, modulating the polysilicon channel current, while a solvent-modification strategy promotes the density of edge-unsaturated sites with enhanced adsorption activity, as confirmed by density functional theory. Benefiting from these optimizations, the GS-FET sensor achieves a sub-500 ppb detection limit toward acetone and enables real-time breath analysis when integrated into a portable mobile-linked device. To further improve the practicality and convenience of the gas sensor, we have proposed a data analysis algorithm to predict the concentration of acetone based on the initial response of the sensors within 5 s with high data reliability. This work demonstrates a practical pathway for leveraging MOF-based architectures in ultrafast, noninvasive diabetes diagnosis and provides new insights into the development of high-performance gas sensors.
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