Related Experiment Video
Updated: Feb 7, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Wafer-scale formation of MoS2 with controlled thickness and high uniformity via conversion of MoOx using H2S
Naoya Okada1, Shinichi Tanabe2, Hitoshi Miura3
1Semiconductor Frontier Research Center, National Institute of Advanced Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305- 8568, Ibaraki, Japan. okada-naoya@aist.go.jp.
Abstract:
Achieving uniform, high-quality, and thickness-controlled two-dimensional semiconductor films at the wafer scale remains a critical challenge for practical device integration. This work presents a scalable synthesis method for MoS2 films on Si/SiO2 wafers using a three-step conversion (3SC) process. The process comprises the deposition of an amorphous MoOx film, low-temperature high-pressure H₂S annealing for sulfurization, and high-temperature Ar annealing to enhance crystallinity. Precise thickness control, from monolayer to ~ 20 nm, is realized by adjusting the initial MoOx thickness. A higher oxygen content in MoOx improves sulfurization efficiency and promotes uniform conversion to MoS2. Structural and optical characterizations using Raman and Photoluminescence (PL) spectroscopy confirm enhanced crystallinity, with a PL-FWHM narrowed to ~ 0.08 eV. The 3SC method achieves uniform MoS2 coverage across the entire wafer, demonstrating its compatibility with large-area fabrication and its potential for future electronics and optoelectronics applications.
More Related Videos
Related Concept Videos
The Sulfur Cycle
Gene Conversion
Gene Conversion
Sulfur Assimilation
Precipitate Formation and Particle Size Control
The obtained precipitate should be either a pure substance of known composition or easily converted to one by a simple process, such as ignition or drying. In addition, the precipitate should be insoluble and easily filterable. In general, filterability...
Uniform Distribution
Two essential properties of this distribution are

