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Updated: Feb 8, 2026

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Enhancing film bulk acoustic resonators performance by optimizing AlN seed layer crystallinity and polarity alignment
Tingting Yang1,2, Qinwen Xu1,2, Yaxin Wang1,2
1School of Integrated Circuits, Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan, China.
This study enhances scandium-doped aluminum nitride resonators for wireless communication. A dual-optimization strategy significantly boosts electromechanical coupling and filter performance for Sub-7 GHz systems.
Area of Science:
- Materials Science
- Electrical Engineering
- Acoustic Devices
Background:
- Aluminum nitride (AlN)-based film bulk acoustic resonators (FBARs) are crucial for wireless communication but suffer from limited electromechanical coupling.
- Scandium (Sc) incorporation in AlN enhances piezoelectric properties, yet often leads to degraded crystallinity and polarity inversion, hindering device performance.
- Theoretical analysis identified the AlN/ScAlN interface as a critical factor in piezoelectric degradation due to polarity mismatch.
Purpose of the Study:
- To address the limitations of Sc-doped AlN resonators by proposing a novel dual-optimization strategy.
- To improve crystalline alignment and eliminate polarity inversion at the AlN/ScAlN interface.
- To enhance the effective electromechanical coupling coefficient and overall performance of FBARs for advanced wireless communication.
Main Methods:
- Employed a single-crystalline AlN seed layer to promote highly c-axis oriented ScAlN films.
- Utilized a subsequent seed layer removal step to eliminate the polarity inversion interface.
- Fabricated and characterized FBARs and filters using the developed dual-optimization strategy.
Main Results:
- Resonators fabricated with the seed layer achieved a maximum quality factor of 736.
- Removal of the seed layer eliminated the polarity inversion interface, increasing the effective electromechanical coupling coefficient from 6.0% to 13.2%.
- Filters demonstrated a center frequency of 6.4 GHz, a 740 MHz bandwidth, and >40 dB out-of-band rejection.
Conclusions:
- The proposed dual-optimization strategy effectively improves crystalline quality and eliminates polarity mismatch in ScAlN films.
- This approach significantly enhances the electromechanical coupling and performance of FBARs.
- The developed filters show great potential for next-generation Sub-7 GHz wireless communication systems.
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