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Updated: Feb 10, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Engineering the electronic structure towards enhanced performances of CO2 adsorption and conversion of a Ti-doped
Junbo Wang1, Qiankai Zhang2, Qi Tang1
1Foshan Power Supply Bureau of Guangdong Power Grid Foshan 528000 China.
Abstract:
The active site of MoS2, predominantly located at the crystalline edge, limits selectivity for the CO2 reduction reaction (CO2RR). Single-Atom Catalysts (SACs), have emerged as a promising avenue to enhance the catalytic performance of MoS2, owing to their high catalytic selectivity on the basal plane and tunable activity in various chemical reactions. In this regard, transition metals from the 8B and 1B groups (Cr, Cu, Sc, Ti, V, and Ni) were investigated as dopants on the basal plane for the first time, employing first-principles calculations based on a 4 × 4 × 1 supercell of the MoS2 monolayer. The Ti/MoS2 catalyst was identified as the most stable among the SACs, attributed to its optimal formation energy. Various Ti-doped models were analyzed, encompassing energy band structure, density of states, charge differential density, Bader charge, and Gibbs free energy. Our findings indicate that Ti induces diminished electron binding, thereby weakening C[double bond, length as m-dash]O with lower energy, consequently enhancing the availability of surface sites and facilitating catalytic reactions. In our investigation of possible reaction pathways, the preferred CO2RR pathway was identified as the reverse water gas conversion (RWGS), with the rate-limiting step being CO2 hydrogenation into carboxyl (*COOH). The Ti modification model on the MoS2 basal surface demonstrated exceptional catalytic performance, reducing the rate-limiting step to 0.177 eV, which is 17 times lower than that of pure MoS2. These calculational results provide valuable theoretical insights for designing highly efficient SACs on MoS2-based functional materials.
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