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Related Experiment Video

Updated: Feb 10, 2026

Production and Targeting of Monovalent Quantum Dots

Production and Targeting of Monovalent Quantum Dots

Published on: October 23, 2014

Probing thermal stability in CsPbI₃ quantum dots with coupled Pb-site doping and halide passivation.

Pouriya Naziri^1,2, Saba Sepahban Shahgoli^1,2, Hadi Jahangiri³

¹Graduate School of Sciences and Engineering, Koç University, Istanbul-34450, Türkiye.

|February 9, 2026

Summary

Doping cesium lead iodide perovskite quantum dots with cobalt or silver enhances their thermal stability. This dual cation-halide doping improves structural integrity and photoluminescence, crucial for durable optoelectronic devices.

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Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

All-inorganic cesium lead iodide (CsPbI₃) quantum dots (QDs) offer excellent optoelectronic properties.
However, their poor thermal and structural stability limits practical device applications.
Surface passivation and compositional modification are key strategies to enhance QD stability.

Purpose of the Study:

To investigate the temperature-dependent stability of pristine and doped CsPbI₃ quantum dots.
To evaluate the effect of dual cation-halide doping (Co²⁺/Cl^- or Ag⁺/Cl^-) on thermal robustness.
To elucidate the stabilization mechanisms for improved CsPbI₃ QD performance.

Main Methods:

Synthesis of pristine, Co²⁺-doped, and Ag⁺-doped CsPbI₃ quantum dots with halide passivation.
Systematic temperature-dependent characterization (20-80 °C) using X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), time-resolved photoluminescence (TRPL), UV-visible absorption (UV-Vis), and Fourier-transform infrared (FTIR).
Analysis of lattice structure, morphology, optical properties, and charge carrier dynamics.

Main Results:

Dual cation-halide doping significantly enhances lattice rigidity and mitigates thermal expansion in CsPbI₃ QDs.
Doped QDs maintain cubic morphology and bright photoluminescence up to 80 °C, unlike pristine QDs which degrade above 60 °C.
Reduced nonradiative recombination rates and suppressed trap states were confirmed via lifetime analysis, with Ag⁺-doped QDs showing superior thermal robustness (minimal lattice dilation and bandgap narrowing).

Conclusions:

Synergistic stabilization achieved through B-site substitution (Co²⁺ or Ag⁺) and halide passivation strengthens CsPbI₃ QDs.
Co²⁺ and Ag⁺ doping effectively suppress thermal degradation and nonradiative recombination pathways.
This work presents a viable strategy for developing thermally stable CsPbI₃-based materials for advanced optoelectronic applications.