Proximity-Assisted Synthesis of Large Area MoS₂ on Different Target Substrates by Chemical Vapor Deposition Using a...

Despite efforts to produce scalable, substrate-independent, low-defect-density, and high-quality MoS₂, this continues to be a critical challenge for industrial-scale applications. This work aims to present a chemical vapor deposition (CVD) method for growing high-quality and potentially large-area mono- to few-layer MoS₂ films via proximity between the Mo nanofilm substrate and the target substrates. By using stoichiometry-guided knowledge of Mo-S and Mo-O-S phase diagrams, Mo nanofilms are oxidized and then sulfurized under optimized conditions to grow high-quality, millimeter-scale mono- to few-layer MoS₂ films in proximity to the target substrate. We have achieved millimeter-scale continuous growth of MoS₂ revealed via optical microscopy. Two-dimensional Raman maps of Full Width at Half Maximum show high-quality growth, and photoluminescence-based B/A exciton amplitude ratio shows high crystalline and optical quality with low defect density.