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Electrothermally Induced Channel Formation in a Spin-Crossover Neuron
Elena Salagre1, Mahnaz Islam1,2, Yeonju Yu3
1Sandia National Laboratories, 7011 East Ave, Livermore, California 94550, United States.
ACS Nano
|February 13, 2026
Summary
LaCoO3 (LCO) devices show unique conductive channel behavior for neuromorphic computing. These channels are narrower and more efficient than VO2 but exhibit hopping and memory effects, offering new functionalities.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Neuroscience
Background:
- Correlated oxides are explored for neuromorphic computing due to their tunable resistance states.
- First-order insulator-metal transitions (IMT) are common, but second-order spin-transition materials like LaCoO3 (LCO) offer alternative functionalities.
- Microscopic details of conductive channel formation in LCO devices remain largely unreported.
Purpose of the Study:
- To reveal the spatiotemporal details of conductive channel formation in LaCoO3 (LCO) devices.
- To compare LCO channel behavior with other materials like VO2 for neuromorphic applications.
- To investigate the influence of spin transitions on channel characteristics and device performance.
Main Methods:
- Combination of infrared (IR) and Raman microscopy.
- Finite element simulations (FES).
- Experimental investigation of LaCoO3 (LCO) and VO2 materials.
Main Results:
- LaCoO3 (LCO) channels are narrower and more efficient than VO2 but more sensitive to electric fields and disorder.
- Observed repeated hopping of channels between locations under steady-state oscillations.
- Identified memory effects at high bias in LCO devices.
- Spin transition in LCO significantly influences channel nucleation, increasing sensitivity to disorder and electrode geometry.
Conclusions:
- LaCoO3 (LCO) exhibits unique channel dynamics, including stochastic hopping and memory effects, driven by its spin transition.
- These characteristics present both challenges (sensitivity to disorder) and opportunities for novel neuromorphic computing functionalities.
- Understanding these microscopic details is crucial for designing next-generation artificial neurons.
Keywords:
Raman spectroscopyartificial neuroninfrared microscopymetal−insulator transitionspin crossoverMore Related Videos
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