Multi-Physical Field Modulated P-Bit Device Based on VO₂ Thin Film.

Area of Science:

• Materials Science
• Computer Engineering
• Physics

Background:

• Probabilistic computation using probability bits (P-bits) shows promise for combinatorial optimization problems like integer factorization due to rapid search capabilities.
• Traditional complementary metal-oxide-semiconductor (CMOS) P-bit implementations require external noise sources, complicating fabrication and system integration.

Purpose of the Study:

• To propose a novel vanadium dioxide (VO2)-based P-bit device that overcomes the limitations of traditional CMOS P-bits.
• To demonstrate a synergistic multi-physical field modulation strategy for enhanced P-bit performance and neuromorphic applications.

Main Methods:

• Development of a VO2-based P-bit device.
• Implementation of synergistic multi-physical field modulation (electric, thermal, optical) for real-time tunability of randomness.
• Evaluation of device durability and inherent randomness.

Main Results:

• The proposed VO2-based P-bit exhibits excellent durability and inherent randomness.
• Output probability is adjustable via synergistic multi-physical field modulation, offering an advantage over single-field controlled P-bits.
• Demonstrated a new phase-change material-based device approach for high-performance P-bits.

Conclusions:

• The VO2-based P-bit offers a viable solution for efficient probabilistic computation and combinatorial optimization.
• Synergistic multi-physical field modulation presents a novel strategy for advanced neuromorphic device applications.