Universal Relations between Thermoelectrics and Noise in Mesoscopic Transport across a Tunnel Junction

Andrei I Pavlov1, Mikhail N Kiselev2

  • 1Karlsruhe Institute of Technology, IQMT, 76131 Karlsruhe, Germany.

Physical Review Letters
|February 16, 2026
PubMed

Related Concept Videos

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.0K
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.4K
Zeroth Law of Thermodynamics01:14

Zeroth Law of Thermodynamics

Experimentally, if object A is in equilibrium with object B, and object B is in equilibrium with object C, then object A is in equilibrium with object C. That statement of transitivity is called the "zeroth law of thermodynamics." For example, a cold metal block and a hot metal block are both placed on a metal plate at room temperature. Eventually, the cold block and the plate will be in thermal equilibrium. In addition, the hot block and the plate will be in thermal equilibrium.
7.2K
Path Between Thermodynamics States01:21

Path Between Thermodynamics States

Consider the two thermodynamic processes involving an ideal gas that are represented by paths AC and ABC in Figure 1:
4.1K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
678