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Updated: Feb 19, 2026
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
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Laser-Direct Printed 2D Material-Based Heterostructure for the Fabrication of Electronic Devices
Ilias Cheliotis1, Filimon Zacharatos1, Avraham Twitto2
1School of Applied Mathematics and Physical Sciences, National Technical University of Athens, Athens, Greece.
Small (Weinheim an Der Bergstrasse, Germany)
|February 18, 2026
Summary
Laser-Induced Forward Transfer (LIFT) precisely fabricates 2D material heterostructures for advanced electronics. This maskless technique enables scalable, high-performance pn-junctions using graphene, PdSe2, and MoSe2.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Integrating 2D materials into electronic devices requires precise deposition and patterning.
- Existing methods face challenges in achieving defect-free fabrication at the microscale.
Purpose of the Study:
- To demonstrate the fabrication of 2D material heterostructures using Laser-Induced Forward Transfer (LIFT).
- To create and characterize 2D material-based pn-junctions with graphene electrodes.
Main Methods:
- Utilized LIFT, a digital and maskless technique, for precise patterning of 2D materials.
- Fabricated vertically stacked heterostructures of graphene, PdSe2, and MoSe2.
- Performed structural and electrical characterization using Raman spectroscopy, AFM, SEM, and FET measurements.
Main Results:
- Achieved micrometer-scale resolution in positioning and shaping 2D material pixels.
- Demonstrated stable electrical performance of PdSe2/MoSe2 pn-junctions with operational voltages from -2 to 2 V.
- Confirmed high-quality material transfer with electron mobilities up to 1200 ± 50 cm2V−1s−1.
Conclusions:
- LIFT is effective for constructing complex 2D heterostructures.
- The technique shows potential for scalable fabrication of high-performance electronic and optoelectronic devices.
