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Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography
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Azimuth-guided image fusion method for sub-λ/18 defect inspection using a laser scattering darkfield imaging system.

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    Advanced semiconductor manufacturing requires sensitive defect inspection. This study introduces an azimuth-guided darkfield imaging method to detect nanoscale defects, overcoming visible spectrum limitations for improved semiconductor yield.

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    Area of Science:

    • Semiconductor manufacturing
    • Optical metrology
    • Nanotechnology

    Background:

    • Continuous scaling of advanced process nodes presents manufacturing challenges.
    • High-sensitivity and high-throughput defect inspection methods are in demand.
    • Visible spectrum darkfield imaging lacks nanoscale sensitivity due to noise and surface roughness.

    Purpose of the Study:

    • To develop a rigorous physical model for defect imaging.
    • To propose an azimuth-guided image fusion strategy for enhanced defect detection.
    • To overcome the sensitivity limitations of darkfield imaging in the visible spectrum.

    Main Methods:

    • Constructed a rigorous physical model based on vectorial electromagnetic theory.
    • Developed an azimuth-guided image fusion strategy exploiting defect scattering dependence on illumination azimuth.
    • Configured an optimal laser scattering darkfield imaging system.

    Main Results:

    • Systematically elucidated mechanisms affecting defect detectability.
    • Achieved effective identification of sub-wavelength (sub-λ/18) defects.
    • Demonstrated enhanced detection capability for randomly oriented subwavelength defects.

    Conclusions:

    • The azimuth-guided fusion method overcomes sensitivity limitations in visible spectrum darkfield imaging.
    • This work provides an efficient solution for nanoscale defect inspection at advanced semiconductor nodes.
    • The developed physical model aids in understanding and improving defect detection mechanisms.