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Azimuth-guided image fusion method for sub-λ/18 defect inspection using a laser scattering darkfield imaging system
Optics Express
|February 18, 2026
Summary
Advanced semiconductor manufacturing requires sensitive defect inspection. This study introduces an azimuth-guided darkfield imaging method to detect nanoscale defects, overcoming visible spectrum limitations for improved semiconductor yield.
Area of Science:
- Semiconductor manufacturing
- Optical metrology
- Nanotechnology
Background:
- Continuous scaling of advanced process nodes presents manufacturing challenges.
- High-sensitivity and high-throughput defect inspection methods are in demand.
- Visible spectrum darkfield imaging lacks nanoscale sensitivity due to noise and surface roughness.
Purpose of the Study:
- To develop a rigorous physical model for defect imaging.
- To propose an azimuth-guided image fusion strategy for enhanced defect detection.
- To overcome the sensitivity limitations of darkfield imaging in the visible spectrum.
Main Methods:
- Constructed a rigorous physical model based on vectorial electromagnetic theory.
- Developed an azimuth-guided image fusion strategy exploiting defect scattering dependence on illumination azimuth.
- Configured an optimal laser scattering darkfield imaging system.
Main Results:
- Systematically elucidated mechanisms affecting defect detectability.
- Achieved effective identification of sub-wavelength (sub-λ/18) defects.
- Demonstrated enhanced detection capability for randomly oriented subwavelength defects.
Conclusions:
- The azimuth-guided fusion method overcomes sensitivity limitations in visible spectrum darkfield imaging.
- This work provides an efficient solution for nanoscale defect inspection at advanced semiconductor nodes.
- The developed physical model aids in understanding and improving defect detection mechanisms.

