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Conductance quantization and quantum-point-contact formation in hBN/HfO2bilayer memristive devices

Tanmayee Parida1, Arpan Bhattacharyya1, Ummiya Qamar2

  • 1Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence, NH 91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201314, India.

Nanotechnology
|February 18, 2026
PubMed
Summary

This study demonstrates quantized conductance and quantum point contact formation in memristive devices using hexagonal boron nitride (hBN) over HfO2. These atomic-scale constrictions are formed by hBN flakes, enabling novel memristive device applications.

Keywords:
hBN/HfO2 heterostructurememristorquantized conductancequantum point contact

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