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High-Performance Self-Powered Vertical MoTe2 p-i-n Photodiode for Near-Infrared Detection and Spike Encoding
Qi Shi1,2, Maoxin Tian1, Hongzhao Wu1
1College of Integrated Circuits, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China.
ACS Nano
|February 18, 2026
Summary
Researchers developed a new self-powered photodetector using WSe2/MoTe2 heterostructures for efficient near-infrared (NIR) detection. This breakthrough offers high performance for applications like LiDAR and biomedical imaging.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Silicon photodetectors have limited near-infrared (NIR) absorption beyond 0.9 μm.
- Thick active layers in silicon devices cause performance and power consumption trade-offs.
Purpose of the Study:
- To develop a high-performance, self-powered photodetector for NIR detection.
- To overcome the limitations of silicon-based photodetectors in the NIR spectrum.
Main Methods:
- Fabrication of a vertical p-type/intrinsic/n-type (p-i-n) photodiode using a van der Waals WSe2/MoTe2 heterostructure.
- Engineering band alignment and heavy doping to enhance the built-in electric field and carrier dynamics.
- Integration with a voltage-controlled oscillator for neuromorphic applications.
Main Results:
- Achieved high responsivity (787 mA·W-1) and external quantum efficiency (EQE, 91.7%) at 1064 nm.
- Demonstrated a fast impulse response time of 19.5 ns under zero bias.
- Showcased a bioinspired optical-to-electrical spike conversion mechanism.
Conclusions:
- The WSe2/MoTe2 p-i-n photodiode offers a promising solution for efficient NIR detection.
- The device's performance and novel spike conversion mechanism open avenues for neuromorphic vision systems.
