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Related Concept Videos

Infrared (IR) Spectroscopy: Overview01:09

Infrared (IR) Spectroscopy: Overview

When electromagnetic radiation passes through a material, atoms or molecules transition from a lower to a higher energy state by absorbing radiation corresponding to the energy difference between the two states. The absorption of infrared (IR) radiation causes transitions between vibrational energy levels in a molecule. Therefore, IR spectroscopy is a useful analytical tool for determining the molecular structure of molecules.
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Updated: Jun 9, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
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Short-Wavelength Infrared Organic Light-Emitting Diodes from Solution-Processable Aggregation-Induced Emission

Yuhang Xu1, Daming Zhou1, Wanyuan Deng1,2

  • 1Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China.

ACS Applied Materials & Interfaces
|February 18, 2026
PubMed
Summary
This summary is machine-generated.

High-performance short-wavelength-infrared (SWIR) organic light-emitting diodes (OLEDs) were developed using aggregation-induced emission (AIE) molecules. These flexible and biocompatible SWIR OLEDs show promise for advanced applications.

Keywords:
aggregation-induced emissioncharge carrier balanceelectron-blocking layeroptical outcoupling efficiencyorganic light-emitting diodesshort-wavelength infrared

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Photonics

Background:

  • Short-wavelength-infrared (SWIR) organic light-emitting diodes (OLEDs) offer mechanical flexibility and biocompatibility for applications like bioimaging and sensors.
  • Current SWIR OLEDs suffer from low luminescence efficiency due to aggregation-caused emission quenching in pure organic semiconductors.

Purpose of the Study:

  • To develop high-performance SWIR OLEDs utilizing solution-processable aggregation-induced emission (AIE) molecules.
  • To enhance device performance by optimizing the exciton generation zone and improving charge balance and light outcoupling.

Main Methods:

  • Incorporation of AIE molecules as the emitting layer in SWIR OLEDs.
  • Introduction of an electron-blocking layer to tailor the exciton generation zone.
  • Device fabrication and characterization of optoelectronic properties and operational stability.

Main Results:

  • Achieved SWIR OLEDs with an emission peak at 1000 nm.
  • Demonstrated a maximum external quantum efficiency of 0.10% and radiant exitance of 3.41 mW cm⁻².
  • Exhibited a stable operational half-lifetime of 2 hours at high current density (2200 mA cm⁻²) in ambient air.

Conclusions:

  • Solution-processable AIE molecules enable high-performance SWIR OLEDs.
  • The developed SWIR OLEDs show stable characteristics suitable for practical applications.
  • This work lays the foundation for a new generation of SWIR OLEDs with diverse application potential.