Twelve-inch electrically anisotropic boridene for optoelectronic computing

Optoelectronic computing devices capable of bipolar responses offer a route to simplified architectures for processing complex tasks. However, advancing such systems towards large-scale, in-sensor computing has been constrained by the difficulty of monolithically integrating neuromorphic optoelectronic arrays with peripheral circuits, largely due to high material growth temperatures and the non-uniform performance of complex device stacks. Here we report Mo_4/3B₂T_z (T_z= O, OH, F) boridene as a low-thermal-budget platform for neuromorphic optoelectronics, enabling twelve-inch deposition below 150 °C with excellent wafer-scale uniformity. Ordered metal vacancies and interlayer registry variations generate an unusual electrical anisotropy in which through-plane conduction dominates over in-plane transport. This anisotropy enables a simplified three-terminal device architecture that exhibits intrinsic bipolar and highly linear programmable photoresponses. Correlative conductive atomic force microscopy and first-principles simulations reveal that vacancy-mediated interlayer charge transfer governs the observed behaviour. We further fabricate a 54 × 54-pixel² optoelectronic computing array with a 99.48% yield and 16 fully separable states. Using a 3k-pixel system prototype, we demonstrate the diagnosis of ophthalmic disorders. Our work establishes Mo_4/3B₂T_z boridene as a scalable nanomaterial platform that brings neuromorphic optoelectronic computing closer to practical implementations.