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Updated: Feb 20, 2026

Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
Ligand Regulation and Mechanism Study of Organotin Carboxylate Resists in DUV Lithography
Tianren Liu1,2, Yuan Chen2, Guoping Liu2
1State Key Laboratory of Advanced Polymer Materials, Polymer Research Institute of Sichuan University, Chengdu 610065, China.
Abstract:
With outstanding lithographic performance, metal-organic hybrid resists are gradually gaining acceptance in the semiconductor industry. While extensively investigated for extreme ultraviolet (EUV) patterning, the specific performance and mechanisms of metal-organic hybrid resists in deep ultraviolet (DUV) lithography have been less studied. Herein, we present a series of organotin carboxylates (OTCs) bearing varied carboxylate ligands as nonchemically amplified DUV resists. Through molecular optimization, this material family demonstrates sub-100 nm resolution with high pattern quality and etch resistance, potentially serving as a direct-patternable hard mask in a bilayer configuration. The structural conversion of the OTCs under DUV irradiation was investigated, revealing a radical-mediated photochemical process. Our findings highlight the viability of OTC material family as high-performance DUV resists in advanced nodes.
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