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Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
Optics Express
|February 20, 2026
Summary
Researchers created new chlorine-vacancy (ClV) color centers in 4H-SiC for fiber-optic telecom bands. These defects show potential for scalable quantum networks.
Area of Science:
- Materials Science
- Quantum Optics
- Solid-State Physics
Background:
- Color centers in silicon carbide (SiC) are promising for quantum technologies.
- Existing color centers often lack emission in crucial telecom bands.
Purpose of the Study:
- To experimentally realize and optically characterize novel chlorine-vacancy (ClV) color centers in 4H-SiC.
- To investigate their emission properties within the fiber-optic telecom bands.
Main Methods:
- Chlorine ion implantation into 4H-SiC followed by high-temperature annealing.
- Photoluminescence spectroscopy to identify and characterize defect emission.
- Controlled experiments to confirm defect origin and optimize creation conditions.
Main Results:
- Successfully created ClV color centers in 4H-SiC.
- Observed four distinct ClV configurations with zero-phonon lines (ZPLs) in the O-, S-, and C-telecom bands.
- Confirmed ClV centers originate from chlorine incorporation, not intrinsic SiC defects.
- Demonstrated stable ZPL intensity up to 30 K.
Conclusions:
- ClV defects represent a new class of telecom-band color centers in 4H-SiC.
- These centers are compatible with CMOS platforms, enabling scalable quantum networks.
- The findings open new avenues for integrated photonic quantum devices.
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