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Strained 2D Semiconductor Lateral Heterojunctions via Grayscale Thermal-Scanning Probe Lithography
Giorgio Zambito1, Giulio Ferrando1, Matteo Barelli1
1Dipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.
Small Science
|February 20, 2026
Summary
Novel strain engineering of 2D transition metal dichalcogenides (TMD) semiconductor layers using grayscale thermal-Scanning Probe Lithography (t-SPL) enables nanoscale control over optoelectronic properties. This method fabricates strained MoS2-Au heterojunctions with tunable electronic responses for advanced nanoelectronic and nanophotonic applications.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- 2D transition metal dichalcogenides (TMD) offer unique optoelectronic properties but require precise nanoscale control.
- Strain engineering is a powerful technique to tune the electronic band structure and properties of 2D materials.
- Existing nanofabrication methods often lack maskless, large-area, and precise strain control capabilities.
Purpose of the Study:
- To demonstrate a novel strain engineering approach for nanoscale tailoring of the optoelectronic response in 2D TMD layers.
- To develop a maskless nanofabrication method for creating locally strained 2D MoS2-Au lateral heterojunction nanoarrays.
- To investigate the strain-induced modulation of the electrical work function and its application in asymmetric heterojunctions.
Main Methods:
- Utilized grayscale thermal-Scanning Probe Lithography (t-SPL) to create periodic nanoarrays of nanoridges on templates.
- Conformally transferred 2D MoS2 layers onto the t-SPL templates, inducing asymmetric and uniaxial strain.
- Fabricated Au nanocontacts onto the strained MoS2 layers to form lateral heterojunctions.
- Characterized the strain-induced work function modulation using Kelvin Probe Force Microscopy (KPFM).
Main Results:
- Achieved nanoscale tailoring of the optoelectronic response in 2D MoS2 layers via strain engineering.
- Demonstrated maskless fabrication of locally strained 2D MoS2-Au lateral heterojunction nanoarrays.
- Showcased strain-modulated electrical work function at the nanoscale by controlling t-SPL template morphology.
- Developed asymmetric lateral heterojunctions with strain-modulated Schottky versus Ohmic behavior.
Conclusions:
- The t-SPL-based strain engineering approach provides effective nanoscale control over 2D TMD optoelectronic properties.
- The fabricated asymmetric Au-MoS2 lateral heterojunctions are a promising platform for tunable ultrathin nanoelectronics, nanophotonics, and sensing.
- This maskless nanofabrication technique offers a versatile route for designing next-generation nanoscale devices.
