Biasing of Metal-Semiconductor Junctions
MOSFET: Enhancement Mode
Metal-Semiconductor Junctions
Valence Bond Theory
MOSFET
Ferromagnetism
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Updated: Feb 22, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
David Maximilian Janas1, Mira Sophie Arndt1, Jonah Elias Nitschke1
1Department of Physics, TU Dortmund University, Dortmund, Germany.
We developed a method to precisely control interfacial oxygen in MgO/Fe(100) heterostructures. This allows tuning spintronic properties by managing oxygen levels, creating a benchmark for oxide/metal junctions.
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