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Updated: Feb 22, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Suppressing Intrinsic Ge Vacancies Enables High Thermoelectric Performance in Rhombohedral GeTe.

Donglin Yuan¹, Hong Chen¹, Pengyuan Zhang^2,3

¹School of Materials Science and Engineering, Xihua University, Chengdu, China.

Small (Weinheim an Der Bergstrasse, Germany)

|February 20, 2026

Summary

This study optimized the rhombohedral phase of Germanium Telluride (GeTe) for thermoelectric applications. A novel fabrication process reduced defects, significantly boosting thermoelectric performance and device reliability.

Keywords:

GeTe carrier concentration and mobility high‐energy ball milling low‐temperature annealing thermoelectric performance

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Area of Science:

Materials Science
Solid State Physics

Background:

Germanium Telluride (GeTe) is a promising thermoelectric material.
Phase transitions in GeTe cause thermal expansion issues, leading to device failure.
The rhombohedral phase of GeTe offers stability but suffers from high carrier concentration and low mobility due to Ge vacancies.

Purpose of the Study:

To develop an effective fabrication process for optimizing the thermoelectric properties of rhombohedral GeTe.
To address limitations caused by intrinsic Ge vacancies and improve carrier transport.
To enhance the overall thermoelectric figure of merit (ZT) for practical applications.

Main Methods:

Integration of high-energy ball milling and low-temperature annealing.
Fragmentation and uniform distribution of Ge second phases.
Co-doping with Bismuth (Bi) and Antimony (Sb) to reduce carrier concentration and thermal conductivity.

Main Results:

Synergistic optimization of carrier concentration and mobility achieved.
Reduction in Ge vacancies through controlled annealing and Ge redissolution.
Maximum thermoelectric figure of merit (ZT) of 1.95 at 650 K.
Average ZT of 1.0 within the 300-673 K temperature range for rhombohedral Ge_0.96Sb_0.02Bi_0.02Te.

Conclusions:

The developed fabrication process effectively controls intrinsic defects in GeTe.
Optimized rhombohedral GeTe exhibits significantly enhanced thermoelectric performance.
Controlling fabrication processes is crucial for improving thermoelectric materials.