Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

698
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
698

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Exploratory metabolomic profiling reveals metabolic alterations potentially associated with pain and blood pressure regulation in a high-sugar diet rat model.

Scientific reports·2026
Same author

Mapping metabolic reprogramming dynamics across pancreatic neuroendocrine tumor cell differentiation at single-cell transcriptomic resolution.

Frontiers in genetics·2026
Same author

General dentists' approach to dental management of patients taking anticoagulants: a national survey-based assessment: pre- and post-procedure practice.

Oral surgery, oral medicine, oral pathology and oral radiology·2026
Same author

Exploring the third dimension in quantum confinement of surface electrons.

Science advances·2026
Same author

MRI-based dental maturity in newborns reflects prenatal exposures and predicts timing of primary tooth eruption.

bioRxiv : the preprint server for biology·2026
Same author

Brain Serotonin Deficiency Impairs Ovarian Reserve Function via the Hypothalamic-Pituitary-Ovarian Axis.

Neuroscience bulletin·2026

Related Experiment Video

Updated: Feb 22, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

10.2K

Precision engineering chiral interfaces for efficient spin injection in metal halide heterostructures.

Jin Xiao1, Yang Li2, Yanan Liu1

  • 1School of Electrical Engineering and Automation, Wuhan University, Wuhan, PR China.

Nature Communications
|February 20, 2026
PubMed
Summary

Researchers developed a novel chiral interface using helical R-PbI2 for opto-spintronics. This engineered interface significantly boosts spin injection efficiency, paving the way for advanced spin-based electronic devices.

More Related Videos

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.6K
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

10.2K

Related Experiment Videos

Last Updated: Feb 22, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

10.2K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.6K
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

10.2K

Area of Science:

  • Opto-spintronics
  • Materials Science
  • Interface Engineering

Background:

  • Precise control of interfaces is critical for spin generation, transport, and detection in opto-spintronic devices.
  • Interface engineering for efficient spin injection presents a significant challenge in the field.

Purpose of the Study:

  • To synthesize a helical structure of PbI2 (R-PbI2) using an interfacial chirality-induced growth approach.
  • To engineer an optimal chiral interface in a heterostructure with minimized strain and defects for enhanced spin injection.

Main Methods:

  • Interfacial chirality-induced growth of R-PbI2.
  • Fabrication of chiral heterostructures with R-NEAPbI3 and PbI2.
  • Circularly polarized pump-probe spectroscopy.
  • Spin-photovoltaic measurements.

Main Results:

  • A few-nanometer-thick R-PbI2 layer was synthesized, exhibiting lower lattice mismatch with adjacent layers.
  • The engineered chiral interface demonstrated minimized residual strain and defect density.
  • Achieved spin-injection efficiency up to 68% and a photocurrent degree of polarization of 29%.

Conclusions:

  • Precise synthesis of chiral interfaces is a promising strategy for manipulating spin dynamics.
  • The developed chiral heterostructure interface enables high spin-injection efficiency and polarization.
  • This approach offers a route towards advanced opto-spintronic applications requiring high spin polarization.