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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Published on: April 8, 2018

Electrically Tunable WSe₂/α-In₂Se₃ van der Waals Ferroelectric Heterostructure for Reconfigurable Photodetection and

Han Chen¹, Yufeng Ning^2,3, Yukang Chen^2,3

¹School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.

ACS Applied Materials & Interfaces

|February 23, 2026

Summary

This study introduces a novel WSe₂/α-In₂Se₃ heterostructure for reconfigurable electronics. The device functions as both a high-performance photodetector and a nonvolatile memory, paving the way for advanced AI hardware.

Keywords:

WSe2 heterostructure hysteresis neuromorphic device photodetector α-In2Se3

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Area of Science:

Materials Science
Condensed Matter Physics
Device Engineering

Background:

Growing demand for compact, energy-efficient hardware in AI and edge computing.
Limitations of conventional electronic architectures for multifunctional systems.
Potential of van der Waals (vdW) ferroelectric semiconductors for reconfigurable electronics.

Purpose of the Study:

To demonstrate a WSe₂/α-In₂Se₃ vdW heterostructure for dynamic and nonvolatile electrical reconfiguration.
To explore dual-mode operation of the heterostructure for photodetection and memory.
To assess the device's potential for artificial neural networks (ANNs).

Main Methods:

Fabrication of a WSe₂/α-In₂Se₃ vdW heterostructure.
Bias-mediated control of ferroelectric polarization and interfacial carrier redistribution.
Performance characterization as a photodetector and memory element.
Implementation and testing in ANNs for image recognition.

Main Results:

Achieved dual-mode operation: high-performance photodetector (detectivity > 10¹² Jones) and nonvolatile memory.
Demonstrated bias-controlled dynamic and nonvolatile reconfiguration of electrical functionality.
Emulated biological synaptic plasticity for neuromorphic computing applications.
Attained 96.76% recognition accuracy on the MNIST dataset using the device in ANNs.

Conclusions:

Established a versatile, electrically reconfigurable platform based on vdW ferroelectric heterojunctions.
Enabled dual-mode operation for photodetection and neuromorphic computing within a single device.
Highlighted the potential for advanced, multifunctional electronic systems in AI and edge computing.