Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs

Area of Science:

• Semiconductor Physics
• Materials Science
• Nanotechnology

Background:

• Gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) are crucial for continued device scaling due to enhanced electrostatic control.
• Post-transition-metal monochalcogenides (PTMCs) are emerging as potential channel materials for next-generation electronics.

Purpose of the Study:

• To investigate the potential of p-type Indium Telluride (InTe) and Gallium Telluride (GaTe) nanowire GAA-MOSFETs for advanced CMOS applications.
• To systematically analyze their performance metrics, including drive current, switching energy, and subthreshold swing, at aggressively scaled gate lengths.

Main Methods:

• First-principles quantum-transport simulations were employed to model PTMC nanowire GAA-MOSFETs.
• Device performance was evaluated at various gate lengths (Lg), focusing on high-performance (HP) and low-power (LP) application benchmarks.

Main Results:

• InTe and GaTe GAA-MOSFETs demonstrated exceptional on-state currents (2470 μA μm⁻¹ for HP, 1125 μA μm⁻¹ for LP at Lg = 5 nm).
• Subthreshold swings (SS) below 60 mV dec⁻¹ were achieved, surpassing the Boltzmann limit.
• Delay time (τ) and power-delay product (PDP) met or exceeded 2028 International Technology Roadmap for Semiconductors (ITRS) targets even at Lg as low as 2-3 nm.

Conclusions:

• InTe and GaTe nanowires are highly promising p-type channel materials for sub-5 nm, ultralow-power, high-performance CMOS technologies.
• These materials offer a superior balance of high drive current and low switching energy compared to conventional silicon.
• The findings pave the way for post-silicon CMOS era devices with enhanced efficiency and speed.