Electronically Driven Magnetoelectric Coupling in Co/La:Hf0.5Zr0.5O2 Heterostructures for Energy-Efficient
Alberto Quintana1, Cesar Magen2,3, Mehrdad Ghiasabadi Farahani1
1Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain.
ACS Applied Materials & Interfaces
|February 25, 2026
Summary
Researchers demonstrate electric field control of magnetism in new materials. This discovery enables faster, low-power memory devices and neuromorphic computing, paving the way for advanced electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Magnetoelectric materials offer low-power memory solutions by using electric fields to control magnetization.
- Ferroelectricity in doped hafnia presents opportunities for multilevel magnetic modulation.
Purpose of the Study:
- To demonstrate electric field-induced modulation of magnetization using ferroelectric switching in a La(1%):Hf0.5Zr0.5O2 film.
- To investigate the response time, energy consumption, and potential for multilevel behavior.
Main Methods:
- Epitaxial growth of La(1%):Hf0.5Zr0.5O2 film adjacent to a cobalt layer.
- Synchrotron radiation dichroic imaging to confirm magnetic changes.
- Electrical measurements to assess response time and energy consumption.
Main Results:
- Achieved a 5% modulation of saturation magnetization via ferroelectric switching.
- Demonstrated a response time faster than 500 ns and energy consumption of 6 nJ.
- Observed multilevel magnetoelectric response, indicating potential for neuromorphic applications.
Conclusions:
- The study confirms electronically driven magnetoelectric effects in a CMOS-compatible system.
- The demonstrated material system is a viable route for developing low-power beyond von Neumann computing technologies.
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