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Optimization of Crystal Growth for Neutron Macromolecular Crystallography

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Published on: March 13, 2021

Microgravity-enabled growth of uniform InAsSb bulk single crystal.

Jidong Huang^1,2, Huaiwen Zheng¹, Zhigang Yin^3,4

¹State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

NPJ Microgravity

|February 25, 2026

Summary

This summary is machine-generated.

Growing uniform Indium Arsenide Antimonide (InAsSb) crystals is difficult on Earth. Microgravity on the China Space Station enabled high-quality InAsSb crystal growth, overcoming previous limitations for advanced applications.

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Area of Science:

Materials Science
Solid State Physics
Crystal Growth

Background:

Growing uniform Indium Arsenide Antimonide (InAsSb) bulk crystals is challenging due to solute segregation and morphological instability under terrestrial conditions.
Buoyancy-driven convection significantly impacts crystal quality during ground-based growth.

Purpose of the Study:

To investigate the feasibility of growing compositionally uniform InAsSb bulk crystals in microgravity.
To overcome the limitations of terrestrial crystal growth methods for InAsSb.

Main Methods:

Utilized the vertical gradient freeze method aboard the China Space Station.
Employed an Indium Arsenide (InAs) seed for crystal growth.
Leveraged microgravity to suppress buoyancy-driven convection and promote diffusion-dominated solidification.

Main Results:

Successfully grew a single-crystalline InAsSb alloy (InAs0.933Sb0.067) with uniform Sb composition (±0.5 mol%).
The microgravity-grown crystal exhibited no macroscopic voids or striations and a tenfold reduction in dislocation density.
Observed superior crystalline quality and electrical properties compared to terrestrial counterparts.

Conclusions:

Microgravity provides a unique environment to overcome intrinsic limitations in ground-based InAsSb crystal growth.
Achieved crystal quality unattainable on Earth, with potential implications for advanced optoelectronic devices.
Demonstrated the effectiveness of the vertical gradient freeze method in microgravity for high-quality semiconductor crystal production.