Related Experiment Video
Updated: Jul 22, 2026

Fabricating Nanogaps by Nanoskiving
Published on: May 13, 2013
Responsive interlayer spacing in staggered metal-organic framework nanosheet membranes
Xiaoyan Peng1, Liwei Han1, Xuanhao Wu1
1Center for Alloy Innovation and Design (CAID), State Key Laboratory of Porous Metal Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, PR China.
Abstract:
Precise control over the stacking of two-dimensional (2D) metal-organic framework (MOF) nanosheets enables the fabrication of MOF films or membranes with adjustable interlayer spacing and/or pore size, offering great potential for numerous applications, yet remains highly challenging. We herein propose a postsynthetic modification strategy to functionalize solution-processable NUS-8 nanosheets with photo-responsive monodentate carboxylic acids undergoing a "trans-cis" conformational change upon irradiation or with non-responsive counterparts. This yields azobenzene-functionalized NUS-8 (designated as NUS-8-Azobenzene) and/or tetra-phenylethylene-functionalized NUS-8 (NUS-8-TPE). The 2D nature and excellent solution processability of resultant NUS-8-Azobenzene and NUS-8-TPE facilitate the fabrication of large-area, highly homogeneous films/membranes with (00l) preferential orientation. Responsive interlayer spacing was observed in the NUS-8-Azobenzene stacked membranes, confirmed by multiple characterizations. Subtle variations in interlayer spacing of NUS-8-Azobenzene stacked membranes under irradiation enable a certain control over the ubiquitous trade-off between membrane selectivity and permeability. This study presents a strategy for fabricating 2D MOF membranes with scalable production and new functionalities, even for rigid and non-responsive MOFs, holding significant potential for practical applications in separation.
Related Concept Videos
Metallic Solids
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability. Many...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
The Electrical Double Layer

