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Sputtering-driven formation of interstitial oxygen for intrinsic NIR detection in IGZO phototransistor

Jinsik Choe1,2, Hyeonmin Bong1,3, Huiyeong Lee1,3

  • 1Semiconductor Solution Center, Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), Icheon, 17303, Republic of Korea.

Scientific Reports
|February 25, 2026
PubMed
Abstract

No abstract available in PubMed .

Keywords:
IGZONIROn/off sputteringOxygen vacancySub-gapinterstitial oxygenphototransistor

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