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Related Experiment Video

Updated: Feb 28, 2026

Preparation and Observation of Thick Biological Samples by Scanning Transmission Electron Tomography
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Exploring 4D-STEM in SEM with an event-driven direct electron detector: Low-dose, high-speed, and sparse data.

Bowen Liu1, Zheng Hu1, Walter van Bodegom2

  • 1Center for Microscopy and Analysis, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, PR China; College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, PR China.

Ultramicroscopy
|February 26, 2026
PubMed
Summary

This study integrates four-dimensional scanning electron microscopy (4D-STEM) with FIB-SEM, enabling high-speed nanoscale imaging and material property mapping. This breakthrough enhances scanning electron microscopy capabilities for advanced materials research.

Keywords:
4D-STEM;SEM;Event-driven detector;Diffraction;Low-dose characterization;Orientation mapping

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Area of Science:

  • Materials Science
  • Electron Microscopy
  • Nanotechnology

Background:

  • Four-dimensional scanning electron microscopy (4D-STEM) is established in transmission electron microscopy (TEM) for advanced imaging.
  • Implementation of 4D-STEM in scanning electron microscopy (SEM) has been limited.

Purpose of the Study:

  • To integrate event-driven direct electron detectors into a focused ion beam scanning electron microscopy (FIB-SEM) system.
  • To enable high-speed 4D-STEM applications within SEM for materials characterization.

Main Methods:

  • Integration of an event-driven direct electron detector into a FIB-SEM.
  • Utilizing a sparse data workflow for fast data processing with high time resolution (1.56 ns).
  • Demonstration through three distinct experimental applications.

Main Results:

  • Achieved nanoscale crystal orientation mapping of FePt alloy nanoparticles with enhanced diffraction contrast.
  • Successfully performed strain mapping on an AlCrFeMnTi high-entropy alloy.
  • Acquired high-quality diffraction patterns of CsPbI₃ perovskites at ultralow doses (4.62 × 10⁻³ e⁻/Ų) with ultrafast acquisition (50 ns/pixel) for grain boundary mapping.

Conclusions:

  • The integration of 4D-STEM significantly advances SEM capabilities.
  • This technology enables high-speed, high-resolution analysis of material properties at the nanoscale.
  • Opens new avenues for materials science research using SEM.