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Microanalysis of β-(AlxGa1-x)2O3 Films Grown by MOCVD.
Mugove Maruzane1, Arpit Nandi2, Sean Douglas1
1Department of Physics, Scottish Universities Physics Alliance (SUPA), University of Strathclyde, Glasgow G4 0NG, UK.
Materials (Basel, Switzerland)
|February 27, 2026
Summary
This study explores aluminum gallium oxide (AlₓGa₁₋ₓ)₂O₃ films, finding that increasing aluminum content widens the bandgap but reduces material quality. This offers insights for optimizing future electronic and optical devices.
Area of Science:
- Materials Science
- Solid State Physics
- Semiconductor Research
Background:
- Gallium oxide (Ga₂O₃) and its alloys are promising for power electronics.
- Tuning the bandgap of (AlₓGa₁₋ₓ)₂O₃ is crucial for advanced device applications.
Purpose of the Study:
- To investigate the effects of aluminum incorporation on the structural, optical, and luminescence properties of β-(AlₓGa₁₋ₓ)₂O₃ films.
- To establish the relationship between Al composition and material characteristics.
- To understand the trade-offs for device fabrication.
Main Methods:
- Metalorganic chemical vapor deposition (MOCVD) for film growth.
- Microanalysis and optical spectroscopy for characterization.
- Atomic force microscopy for surface topography analysis.
Main Results:
- Linear Al incorporation observed, correlating with precursor flow rates.
- Optical bandgap increased from 4.96 eV to 5.44 eV with increasing Al fraction (x).
- Higher Al content led to decreased crystallinity, increased surface roughness, and reduced cathodoluminescence intensity.
Conclusions:
- Bandgap tuning in (AlₓGa₁₋ₓ)₂O₃ is achievable but comes at the cost of material quality.
- Findings guide strategies for developing high-performance electronic and optical devices.
- The observed trade-off is critical for material design and device optimization.
