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InGaN Laser Diode with Spin-on-Glass Isolation Fabricated by Planarization and Etch-Back Process
Katarzyna Piotrowska-Wolińska1, Szymon Grzanka1, Łucja Marona1
1Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland.
Micromachines
|February 27, 2026
Summary
Spin-on-glass (SOG) offers a cost-effective alternative for insulating InGaN laser diodes. This method improves fabrication and achieves stable laser operation, paving the way for scalable photonic applications.
Area of Science:
- Semiconductor Physics
- Materials Science
- Photonics
Background:
- Indium Gallium Nitride (InGaN) laser diodes are crucial for advanced photonic applications.
- Conventional fabrication methods using silicon dioxide (SiO2) present challenges in terms of processing complexity and cost.
- Improved insulation and planarization techniques are needed for scalable InGaN laser diode manufacturing.
Purpose of the Study:
- To investigate the use of spin-on-glass (SOG) as an insulation and planarization layer in InGaN-based ridge-waveguide laser diodes.
- To compare the SOG approach with conventional silicon dioxide (SiO2) methods.
- To evaluate the electrical and optical characteristics and operational stability of SOG-insulated laser diodes.
Main Methods:
- Fabrication of InGaN laser diodes on GaN substrates using Metalorganic Chemical Vapor Deposition (MOCVD).
- Growth of In0.11Ga0.89N quantum wells for the active region.
- Application of spin-on-glass (SOG) for insulation and planarization, followed by an etch-back process for electrical contact formation.
- Characterization of insulating surfaces and device performance under pulsed and continuous-wave (CW) conditions, utilizing a Nickel (Ni) protective layer.
Main Results:
- Successful formation of high-quality insulating surfaces with excellent adhesion to ridge sidewalls using SOG.
- Demonstration of favorable electrical and optical characteristics in the fabricated InGaN laser diodes.
- Achieved stable laser operation under both pulsed and continuous-wave (CW) conditions.
Conclusions:
- Spin-on-glass (SOG) is a viable and promising alternative for insulating InGaN laser diodes.
- The SOG approach offers improved surface planarity, reduced processing complexity, and lower fabrication costs compared to traditional SiO2 methods.
- This technique enables scalable and cost-effective manufacturing of InGaN laser diodes for advanced photonic applications.
