A Field-Driven Growth Model for Uniform Thin-Film Growth

Externally applied electric fields are widely employed during thin-film deposition to improve film uniformity, texture and densification. Despite extensive experimental evidence, the physical mechanisms by which such fields influence nucleation, surface diffusion, island coalescence and interface stability remain theoretically fragmented. Classical thin-film growth models assume a field-free energetic landscape and therefore provide limited predictive guidance for field-assisted manufacturing strategies. In this work, we introduce the Field-Driven Growth Model (FDGM), a unified theoretical framework that incorporates field-matter interactions directly into the free-energy functional governing thin-film growth. By explicitly accounting for effective dipolar coupling arising from field-induced polarization of surface species, predominantly quadratic in the field amplitude and consistent with linear-response polarization, the model consistently modifies the fundamental processes of nucleation, surface diffusion and coalescence. At the continuum scale, the FDGM predicts a field-induced stabilization mechanism that suppresses long-wavelength roughening modes and defines a field-controlled morphological crossover wavelength (field-controlled cutoff). The FDGM demonstrates that field-assisted nucleation bias, anisotropic surface diffusion, field-biased coalescence pathways and morphological stabilization are not independent phenomena, but multiscale manifestations of a single energy-minimization principle acting on a field-modified energy landscape. By providing analytical stability criteria and explicit links between external field parameters and morphological outcomes, the model establishes a predictive foundation for the manufacturing of thin films with improved uniformity in advanced thin-film-based devices. The framework is broadly applicable to deposition techniques such as sputtering, pulsed-laser deposition, chemical vapor deposition and atomic layer deposition.