Recent Progress in Silicon-Based On-Chip Integrated Infrared Photodetectors

Area of Science:

• Optoelectronics and Photonics
• Materials Science
• Semiconductor Devices

Background:

• Infrared (IR) photodetectors are crucial for various applications but face limitations like high cost and bulky cooling requirements.
• Traditional bulk semiconductor detectors hinder Size, Weight, and Power (SWaP)-sensitive applications.
• Silicon-based integration with CMOS processes offers a path to miniaturized, cost-effective photonic integrated circuits (PICs).

Purpose of the Study:

• To review recent advancements in silicon-based infrared photodetectors.
• To explore progress across Group IV (Ge/GeSn), III-V, and 2D material systems.
• To provide an outlook on future intelligent sensing systems through optoelectronic convergence.

Main Methods:

• Review of current literature and research on silicon-based IR photodetectors.
• Analysis of material systems including Group IV, III-V compounds, and 2D materials.
• Discussion of integration with CMOS technology for on-chip sensing and data transmission.

Main Results:

• Significant progress has been made in developing silicon-based IR photodetectors.
• Different material systems (Ge/GeSn, III-V, 2D) show promise for specific IR detection needs.
• On-chip integration enables enhanced functionality for miniaturized optoelectronic systems.

Conclusions:

• Silicon-based IR photodetectors are a key technology for overcoming limitations of traditional detectors.
• Continued development in material science and integration will drive the creation of next-generation intelligent sensing systems.
• Optoelectronic convergence is paving the way for advanced, compact, and efficient IR sensing solutions.