Related Experiment Video
Updated: Feb 28, 2026
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Giant Switchable Remanent Polarization and Photocurrent in Ferroelectric Thin Film Photomemristor for In Situ
Zhen Zhao1, Chengze Sun2, Zhijin Duo1
1Key Laboratory of Optic-Electronic Information Materials of Hebei Province, School of Life Sciences, Institute of Life Science and Green Development, Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding, China.
Abstract:
Ferroelectric thin film photomemristors with a stable and tunable short-circuit current offer a promising solution for developing machine vision systems with in situ training. However, previously reported devices exhibit inadequate remanent polarization and limited short-circuit currents, posing significant challenges to the efficient implementation of in situ training in complex environments. In this work, we realized the in situ training in a machine vision system through the Pt/SrRuO3/PbZr0.4Ti0.6O3/SrRuO3/SrTiO3 device. Induced by the bottom electrode-induced stress, the device shows a large remanent polarization of 94 µC cm-2 and an ultra-high short-circuit current of 183.35 nA. Furthermore, the stable and tunable multilevel photocurrents of this device enable image edge processing and in situ multifunctional neural signal training for miniature vehicles in machine vision systems. This work demonstrates the immense potential of ultra-high-performance ferroelectric thin film photomemristors for advancing machine vision systems research.
