Efficient 180 Gb/s NRZ C-band silicon microring modulator exceeding 100 GHz bandwidth

We design and experimentally demonstrate a silicon microring modulator working in C-band based on a commercial silicon photonics platform. The device achieves a 3-dB electro-optic bandwidth exceeding 100 GHz and a low V_π·L of 0.4 V·cm at -2 V bias, enabling advanced modulation formats of 180 Gb/s NRZ and 280 Gb/s PAM-4 to operate below the 20% soft-decision forward error correction threshold of 2.4 × 10^-2, aided by Volterra Nonlinear Equalization and Maximum Likelihood Sequence Estimation.