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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
High-Performance Differential Imaging via Reconfigurable Black Phosphorus p-n Homojunction Optoelectronics
Rui Hao1,2, Lili Luo1, Lu Yang1
1School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
None:
The advancement of differential imaging and adaptive machine vision demands hardware capable of dynamic signal modulation, yet traditional photodetectors are limited by static doping profiles and fixed junction polarities. To overcome this bottleneck, we present a reconfigurable black phosphorus (BP) p-n homojunction photodetector engineered via in situ ferroelectric domain programming. By leveraging the non-volatile ferroelectric field of a bismuth ferrite substrate, we achieve precise, nondestructive modulation of the BP band structure, allowing for reversible switching between p-n and n-p configurations within a single device channel. This ferroelectric doping strategy effectively eliminates interface damage associated with ion implantation while enabling programmable rectification behaviors. The device demonstrates self-powered operation with a responsivity of 44 mA W-1 at 808 nm under zero-bias conditions. Crucially, we demonstrate a single-pixel imaging prototype where the reconfigurable junction polarity enables tunable edge sharpness and high-fidelity image reconstruction. This work establishes a paradigm for ferroelectrically programmable 2D devices, providing a versatile platform for differential imaging and contrast-enhancement optoelectronic applications.
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