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3D reconstruction and etching profile simulation for wiggling active area effect in dynamic random access memory

Ziyi Hu^1,2, Jing Wen¹, Chaoran Yang^1,2,3

¹State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

Communications Engineering

|March 1, 2026

Summary

Researchers investigated the "wiggling active area" (AA) defect in Dynamic Random Access Memory (DRAM) fabrication. Optimizing oxygen flow during plasma etching significantly improved AA structural integrity and DRAM device reliability.

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Area of Science:

Semiconductor Manufacturing
Materials Science
Electrical Engineering

Background:

Dynamic Random Access Memory (DRAM) is crucial for computing.
The active area (AA) structure is vital for DRAM performance.
Plasma etching in DRAM fabrication can cause "wiggling AA" defects, impacting device reliability.

Purpose of the Study:

To understand the underlying mechanisms of the "wiggling AA" effect during DRAM fabrication.
To develop a model correlating etching parameters with AA structural deformation.
To identify strategies for mitigating "wiggling AA" defects and improving DRAM manufacturing.

Main Methods:

Fabrication of DRAM active area transistors.
Three-dimensional (3D) reconstruction using focused ion beam-scanning electron microscopy (FIB-SEM).
Development and application of a 3D etching feature profile model.
Simulation of the etching process under varying oxygen flow rates.

Main Results:

Characterization of "wiggling AA" defects using advanced 3D imaging.
A validated 3D etching model predicting structural deformations.
Demonstrated improvement in AA structure by adjusting oxygen flow rates during plasma etching.

Conclusions:

The study elucidates the mechanistic origins of the "wiggling AA" effect in DRAM.
Modulating oxygen flow rate is an effective strategy to enhance AA structural integrity.
Provides actionable insights for optimizing high-density DRAM manufacturing processes.